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Planar photodiodes based on p-HgCdTe (x = 0.22) epilayers grown by molecular beam epitaxyOVSYUK, V. N; REMESNIK, V. G; LIBERMAN, V. G et al.Infrared physics & technology. 1996, Vol 37, Num 3, pp 321-323, issn 1350-4495Article

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